short channel

Through solving possion equation, the characteristics of short-channel MOSFET device is analyzed in details in the following three aspects: the effect of channel length modulation, the change of threshold voltage and potential barrier decrease between source and channel.

通过求解泊松方程，从沟道长度调制效应、阈值电压变化及源极同沟道间的势垒变化三个方面详细分析了短沟道MOSFET的器件特性。

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This paper focuses on the chip in the actual design of some specific problems encountered, such as a more accurate static timing analysis, clock crosstalk, power distribution, and substrate leakage, short channel effects and so on.

这里主要讨论在实际设计芯片中所遇到的一些具体问题，诸如更准确的静态时序分析，时钟串扰，电源分布，以及衬底漏电，短沟道效应等。

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Design and Properties of the Input of Detonating Fuse Assembly in Short Channel Two-level Explosive Train

短通道二级传爆序列导爆索组件输入端的设计及性能研究

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An Analytical Threshold Voltage Model for Short Channel MOS FET With Boron and Arsenic Implantation

双离子注入短沟道MOS FET的阈值电压解析模型

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Analysis of Threshold Voltage Temperature Coefficient for Short Channel MOSFETs

短沟道MOST阈值电压温度系数的分析

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The commercial paper emerged in year 2005. Its appearance provides the various enterprises a new short term financing channel apart from the short term loan and discount note.

短期融资券于2005年问世，它的出现为各类型的企业提供了除短期贷款、贴现票据以外的一种融资工具。

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Concerning the issue of market differentiation, increase users' differentiation awareness through price differentiation of high quality and reasonable price; short-channel, high-coverage and knowledge marketing, to form channel differentiation, and make buyers accept then pay for a premium price.

在市场差异化方面，通过优质优价的价格差异化，短渠道、高覆盖、知识营销的渠道差异化，让用户认知和接受差异化价值，并为此支付差异化溢价。

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We deduced a expressions for threshold voltage temperature coefficient of short channel MOST.

推导了了一个短沟道MOST阈值电压温度系数表达式；

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Two-Dimensional Short Channel Mosfet Steady State and Substrate Current Simulation

二维短沟道MOSFET直流稳态与衬底电流的数值模拟

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experimental investigation of flow fields in outlet hole of a short channel with jet impingement

射流冲击对短通道出流孔流场影响的实验研究

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A New Direct Tunneling Gate Current Model for Short Channel MOSFETs with HALO Structure

一个适用于短沟HALO结构MOS器件的直接隧穿栅电流模型

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Analytical Model of Subthreshold Current for Short Channel MOSFET

短沟道MOSFET亚阈值电流的解析模型

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The precision of the existing SIR estimation techniques depends on channel condition and observation window. But in the TDD-CDMA system, the specific condition that the time slot multiplexed is short and channel condition varies sharply for different vehicle speed makes the accuracy of estimation decrease.

现有的SIR估计方法准确度依赖于信道条件和观测时间，而TDD-CDMA系统复用时隙短，车速条件下信道变化剧烈的特点使得估计准确度降低。

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When repeater is introduced to CDMA system, it will cause phase confusion of base station short code, severe pilot channel pollution, and it will exacerbate unnecessary soft handoff. Even it will result in network paralysis.

引入直放站后，导致服务区内基站短码相位混乱，导频污染严重，网络优化工作困难，同时加大了不必要的软切换，甚至可能导致移动网络瘫痪。

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The Model of Threshold Voltage in Short Channel Devices

短沟道器件阈电压模型

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Radiation Enhanced Threshold Drift Effect of Short-channel MOSFET

短沟道MOSFET阈值电压辐照增强漂移效应

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A threshold voltage model for short-channel MOSFET is developed by solving a 2-D Possion's equation. The derived DIBL factor can be used to analysis the influence of the parameters on short-channel effects.

通过求解二维泊松方程推导了一个简洁的短沟道MOS的阈值电压模型，得到的DIBL因子可用于分析参数对短沟道效应的影响。

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